Technische Details PCFFS10120AF ONN
Description: DIODE SIL CARBIDE 1.2KV 10A DIE, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.723 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: Die, Current - Average Rectified (Io): 10A, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tray.
Weitere Produktangebote PCFFS10120AF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| PCFFS10120AF | onsemi |
Description: DIODE SIL CARBIDE 1.2KV 10A DIE Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.723 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: Die Current - Average Rectified (Io): 10A Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
PCFFS10120AF | onsemi |
 Diodes - General Purpose, Power, Switching Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D1, Die Silicon Carbide (SiC) Schottky Diode - EliteSiC, 15 A, 1200 V, D1, Die |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PCFFS10120AF |
Hersteller: onsemi
Description: DIODE SIL CARBIDE 1.2KV 10A DIE
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.723 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: Die
Current - Average Rectified (Io): 10A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tray
Description: DIODE SIL CARBIDE 1.2KV 10A DIE
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.723 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: Die
Current - Average Rectified (Io): 10A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PCFFS10120AF |
|
Hersteller: onsemi
Diodes - General Purpose, Power, Switching Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D1, Die Silicon Carbide (SiC) Schottky Diode - EliteSiC, 15 A, 1200 V, D1, Die
Diodes - General Purpose, Power, Switching Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D1, Die Silicon Carbide (SiC) Schottky Diode - EliteSiC, 15 A, 1200 V, D1, Die
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH