Technische Details PCFFS10120AF ONN
Description: DIODE SIL CARBIDE 1.2KV 10A DIE, Packaging: Tray, Package / Case: Die, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Current - Average Rectified (Io): 10A, Supplier Device Package: Die, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.723 V @ 10 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote PCFFS10120AF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| PCFFS10120AF | onsemi |
Description: DIODE SIL CARBIDE 1.2KV 10A DIE Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 10A Supplier Device Package: Die Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.723 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
PCFFS10120AF | onsemi |
 Diodes - General Purpose, Power, Switching Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D1, Die Silicon Carbide (SiC) Schottky Diode - EliteSiC, 15 A, 1200 V, D1, Die |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PCFFS10120AF |
Hersteller: onsemi
Description: DIODE SIL CARBIDE 1.2KV 10A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.723 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARBIDE 1.2KV 10A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.723 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PCFFS10120AF |
|
Hersteller: onsemi
Diodes - General Purpose, Power, Switching Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D1, Die Silicon Carbide (SiC) Schottky Diode - EliteSiC, 15 A, 1200 V, D1, Die
Diodes - General Purpose, Power, Switching Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D1, Die Silicon Carbide (SiC) Schottky Diode - EliteSiC, 15 A, 1200 V, D1, Die
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH