| Anzahl | Privatkunde |
|---|---|
| 1+ | 40.01 EUR |
| 10+ | 36.78 EUR |
| 25+ | 35.25 EUR |
| 50+ | 34.09 EUR |
| 100+ | 31.06 EUR |
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Produktbewertung abgeben
Technische Details PCFFS40120AF onsemi
Description: DIODE SIL CARB 1.2KV WAFER DIE, Packaging: Tray, Package / Case: Die, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 2250pf @ 1V, 100kHz, Current - Average Rectified (Io): 61A, Supplier Device Package: Die, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote PCFFS40120AF nach Preis ab 18.6 EUR bis 18.6 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| PCFFS40120AF | onsemi |
 Description: DIODE SIL CARB 1.2KV WAFER DIEPackaging: Tray Package / Case: Die Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2250pf @ 1V, 100kHz Current - Average Rectified (Io): 61A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
auf Bestellung 629 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||
| PCFFS40120AF | ONN |
|
auf Bestellung 751 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PCFFS40120AF |
|
Hersteller: onsemi
Description: DIODE SIL CARB 1.2KV WAFER DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2250pf @ 1V, 100kHz
Current - Average Rectified (Io): 61A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV WAFER DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2250pf @ 1V, 100kHz
Current - Average Rectified (Io): 61A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 629 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 629+ | 18.6 EUR |
| PCFFS40120AF |
|
Hersteller: ONN
auf Bestellung 751 Stücke:
Lieferzeit 21-28 Tag (e)