PCFFS50120AF onsemi

Description: DIODE SIL CARB 1.2KV WAFER DIE, Packaging: Tray, Package / Case: Die, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Current - Average Rectified (Io): 50A, Supplier Device Package: Die, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 50 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.