PD55003L-E STMicroelectronics
auf Bestellung 3229 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.88 EUR |
| 10+ | 8.52 EUR |
| 100+ | 7.41 EUR |
| 500+ | 7.08 EUR |
| 1000+ | 6.95 EUR |
| 3000+ | 6.67 EUR |
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Technische Details PD55003L-E STMicroelectronics
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; RF; 40V; 2.5A; 14W; PowerFLAT; SMT, Power dissipation: 14W, Drain-source voltage: 40V, Efficiency: 52%, Frequency: 500MHz, Kind of channel: enhancement, Type of transistor: N-MOSFET, Case: PowerFLAT, Kind of package: reel; tape, Kind of transistor: RF, Electrical mounting: SMT, Polarisation: unipolar, Drain current: 2.5A, Output power: 3W, Open-loop gain: 19dB.
Weitere Produktangebote PD55003L-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PD55003L-E | Hersteller : STMicroelectronics |
 Trans RF MOSFET N-CH 40V 2.5A 8-Pin Power Flat EP T/R |
Produkt ist nicht verfügbar |
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PD55003L-E | Hersteller : STMicroelectronics |
Trans RF FET N-CH 40V 2.5A 14-Pin Power Flat T/R |
Produkt ist nicht verfügbar |
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| PD55003L-E | Hersteller : STMicroelectronics |
Trans RF FET N-CH 40V 2.5A 14-Pin Power Flat T/R |
Produkt ist nicht verfügbar |
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PD55003L-E | Hersteller : STMicroelectronics |
Description: RF MOSFET LDMOS 12.5V POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Current Rating (Amps): 2.5A Frequency: 500MHz Power - Output: 3W Gain: 19dB Technology: LDMOS Supplier Device Package: PowerFLAT™ (5x5) Part Status: Active Voltage - Rated: 40 V Voltage - Test: 12.5 V Current - Test: 50 mA |
Produkt ist nicht verfügbar |
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PD55003L-E | Hersteller : STMicroelectronics |
Description: RF MOSFET LDMOS 12.5V POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Current Rating (Amps): 2.5A Frequency: 500MHz Power - Output: 3W Gain: 19dB Technology: LDMOS Supplier Device Package: PowerFLAT™ (5x5) Part Status: Active Voltage - Rated: 40 V Voltage - Test: 12.5 V Current - Test: 50 mA |
Produkt ist nicht verfügbar |
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PD55003L-E | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; RF; 40V; 2.5A; 14W; PowerFLAT; SMT Power dissipation: 14W Drain-source voltage: 40V Efficiency: 52% Frequency: 500MHz Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerFLAT Kind of package: reel; tape Kind of transistor: RF Electrical mounting: SMT Polarisation: unipolar Drain current: 2.5A Output power: 3W Open-loop gain: 19dB |
Produkt ist nicht verfügbar |