PD57018TR-E STMicroelectronics
Hersteller: STMicroelectronicsDescription: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Cut Tape (CT)
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 2.5A
Frequency: 945MHz
Power - Output: 18W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 100 mA
auf Bestellung 416 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 49.23 EUR |
| 10+ | 39.88 EUR |
| 25+ | 37.54 EUR |
| 100+ | 37.1 EUR |
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Technische Details PD57018TR-E STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF, Packaging: Tape & Reel (TR), Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads), Current Rating (Amps): 2.5A, Frequency: 945MHz, Power - Output: 18W, Gain: 16.5dB, Technology: LDMOS, Supplier Device Package: PowerSO-10RF (Formed Lead), Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 100 mA.
Weitere Produktangebote PD57018TR-E
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Preis |
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PD57018TR-E | Hersteller : STMicroelectronics |
Trans RF FET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R |
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PD57018TR-E | Hersteller : STMicroelectronics |
Trans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R |
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PD57018TR-E | Hersteller : STMicroelectronics |
Trans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R |
Produkt ist nicht verfügbar |
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PD57018TR-E | Hersteller : STMicroelectronics |
Description: RF MOSFET LDMOS 28V POWERSO-10RFPackaging: Tape & Reel (TR) Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Current Rating (Amps): 2.5A Frequency: 945MHz Power - Output: 18W Gain: 16.5dB Technology: LDMOS Supplier Device Package: PowerSO-10RF (Formed Lead) Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 100 mA |
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PD57018TR-E | Hersteller : STMicroelectronics |
RF MOSFET Transistors POWER R.F. |
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| PD57018TR-E | Hersteller : STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 65V; 2.5A; 31.7W; PowerSO10RF Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerSO10RF Mounting: SMD Polarisation: unipolar Drain current: 2.5A Gate-source voltage: ±20V Power dissipation: 31.7W Drain-source voltage: 65V |
Produkt ist nicht verfügbar |

