PD57030S-E STMicroelectronics
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details PD57030S-E STMicroelectronics
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; RF; 65V; 4A; 52.8W; PowerSO10RF, Type of transistor: N-MOSFET, Polarisation: unipolar, Kind of transistor: RF, Drain-source voltage: 65V, Drain current: 4A, Power dissipation: 52.8W, Case: PowerSO10RF, Gate-source voltage: ±20V, Kind of package: tube, Frequency: 945MHz, Kind of channel: enhanced, Output power: 30W, Electrical mounting: SMT, Open-loop gain: 14dB, Efficiency: 53%, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote PD57030S-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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| PD57030S-E | Hersteller : STMicroelectronics |
 Trans RF FET N-CH 65V 4A 3-Pin PowerSO-10RF (Straight lead) Tube |
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PD57030S-E | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; RF; 65V; 4A; 52.8W; PowerSO10RF Type of transistor: N-MOSFET Polarisation: unipolar Kind of transistor: RF Drain-source voltage: 65V Drain current: 4A Power dissipation: 52.8W Case: PowerSO10RF Gate-source voltage: ±20V Kind of package: tube Frequency: 945MHz Kind of channel: enhanced Output power: 30W Electrical mounting: SMT Open-loop gain: 14dB Efficiency: 53% Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PD57030S-E | Hersteller : STMicroelectronics |
Description: RF MOSFET LDMOS 28V POWERSO-10RF Packaging: Tube Package / Case: PowerSO-10 Exposed Bottom Pad Current Rating (Amps): 4A Frequency: 945MHz Power - Output: 30W Gain: 14dB Technology: LDMOS Supplier Device Package: PowerSO-10RF (Straight Lead) Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 50 mA |
Produkt ist nicht verfügbar |
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PD57030S-E | Hersteller : STMicroelectronics |
RF MOSFET Transistors POWER R.F. |
Produkt ist nicht verfügbar |
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PD57030S-E | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; RF; 65V; 4A; 52.8W; PowerSO10RF Type of transistor: N-MOSFET Polarisation: unipolar Kind of transistor: RF Drain-source voltage: 65V Drain current: 4A Power dissipation: 52.8W Case: PowerSO10RF Gate-source voltage: ±20V Kind of package: tube Frequency: 945MHz Kind of channel: enhanced Output power: 30W Electrical mounting: SMT Open-loop gain: 14dB Efficiency: 53% |
Produkt ist nicht verfügbar |