PDTA113EMB,315 Nexperia
| Anzahl | Preis |
|---|---|
| 5301+ | 0.1 EUR |
| 10000+ | 0.092 EUR |
| 100000+ | 0.075 EUR |
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Technische Details PDTA113EMB,315 Nexperia
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN, Qualification: AEC-Q100, Grade: Automotive, Resistor - Emitter Base (R2): 1 kOhms, Resistor - Base (R1): 1 kOhms, Frequency - Transition: 180 MHz, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: DFN1006B-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote PDTA113EMB,315
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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PDTA113EMB,315 | Nexperia USA Inc. |
 Description: TRANS PREBIAS PNP 50V 0.1A 3DFNQualification: AEC-Q100 Grade: Automotive Resistor - Emitter Base (R2): 1 kOhms Resistor - Base (R1): 1 kOhms Frequency - Transition: 180 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1006B-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
PDTA113EMB,315 | Nexperia |
Digital Transistors SOT883B 50V .1A PNP RET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PDTA113EMB,315 |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Qualification: AEC-Q100
Grade: Automotive
Resistor - Emitter Base (R2): 1 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 180 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1006B-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Qualification: AEC-Q100
Grade: Automotive
Resistor - Emitter Base (R2): 1 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 180 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1006B-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PDTA113EMB,315 |
|
Hersteller: Nexperia
Digital Transistors SOT883B 50V .1A PNP RET
Digital Transistors SOT883B 50V .1A PNP RET
Produkt ist nicht verfügbar
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen
Stück im Wert von UAH