PDTA123EMB,315 Nexperia USA Inc.
auf Bestellung 79970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11225+ | 0.05 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PDTA123EMB,315 Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V, Supplier Device Package: DFN1006B-3, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 180 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, Qualification: AEC-Q100, Resistors Included: R1 and R2.
Weitere Produktangebote PDTA123EMB,315 nach Preis ab 0.039 EUR bis 0.05 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
PDTA123EMB,315 | Hersteller : NXP USA Inc. |
 Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Bulk Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V Supplier Device Package: DFN1006B-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Resistors Included: R1 and R2 |
auf Bestellung 139871 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||
| PDTA123EMB,315 | Hersteller : NXP Semiconductors |
Trans Digital BJT PNP 50V 100mA 250mW Automotive AEC-Q101 3-Pin DFN-B T/R |
auf Bestellung 39871 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||
| PDTA123EMB,315 | Hersteller : NXP Semiconductors |
Trans Digital BJT PNP 50V 100mA 250mW Automotive AEC-Q101 3-Pin DFN-B T/R |
auf Bestellung 100000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||
| PDTA123EMB,315 | Hersteller : NEXPERIA |
Description: NEXPERIA - PDTA123EMB,315 - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 139871 Stücke: Lieferzeit 14-21 Tag (e) |
||||||
| PDTA123EMB,315 | Hersteller : NXP |
Description: NXP - PDTA123EMB,315 - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 139871 Stücke: Lieferzeit 14-21 Tag (e) |
||||||
 |
PDTA123EMB,315 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V Supplier Device Package: DFN1006B-3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Qualification: AEC-Q100 Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
|||||
 |
PDTA123EMB,315 | Hersteller : Nexperia |
Digital Transistors PDTA123EMB/SOT883B/XQFN3 |
Produkt ist nicht verfügbar |