auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5129+ | 0.03 EUR |
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Technische Details PDTA124EQCZ Nexperia
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V, Supplier Device Package: DFN1412D-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 360 mW, Frequency - Transition: 180 MHz, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote PDTA124EQCZ nach Preis ab 0.02 EUR bis 0.37 EUR
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PDTA124EQCZ | Hersteller : Nexperia USA Inc. |
 Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Resistors Included: R1 and R2 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTA124EQCZ | Hersteller : Nexperia |
Trans Digital BJT PNP 50V 100mA 450mW 3-Pin DFN-D T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTA124EQCZ | Hersteller : Nexperia |
Digital Transistors PDTA124EQC/SOT8009/DFN1412D-3 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTA124EQCZ | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Resistors Included: R1 and R2 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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