PDTA143EM,315 NXP USA Inc.
auf Bestellung 189945 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9713+ | 0.05 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PDTA143EM,315 NXP USA Inc.
Description: TRANS PREBIAS PNP 50V SOT883, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Supplier Device Package: SOT-883, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote PDTA143EM,315 nach Preis ab 0.06 EUR bis 0.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
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| PDTA143EM,315 | Hersteller : NXP Semiconductors |
Trans Digital BJT PNP 50V 100mA 250mW Automotive 3-Pin DFN T/R |
auf Bestellung 149945 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTA143EM,315 | Hersteller : Nexperia |
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PDTA143EM,315 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V SOT883 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SOT-883 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
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PDTA143EM,315 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V SOT883 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SOT-883 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
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PDTA143EM,315 | Hersteller : Nexperia |
Digital Transistors PDTA143EM/SOT883/XQFN3 |
Produkt ist nicht verfügbar |