PDTA143EQAZ Nexperia
| Anzahl | Preis |
|---|---|
| 5495+ | 0.1 EUR |
| 10000+ | 0.088 EUR |
| 100000+ | 0.072 EUR |
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Technische Details PDTA143EQAZ Nexperia
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Supplier Device Package: DFN1010D-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 280 mW, Frequency - Transition: 180 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, Grade: Automotive, Qualification: AEC-Q101, Resistors Included: R1 and R2.
Weitere Produktangebote PDTA143EQAZ nach Preis ab 0.088 EUR bis 0.12 EUR
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PDTA143EQAZ | Nexperia USA Inc. |
 Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Bulk Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: DFN1010D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 280 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 125000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PDTA143EQAZ | NXP Semiconductors |
Trans Digital BJT PNP 50V 100mA 440mW Automotive 3-Pin DFN-D EP |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| PDTA143EQAZ |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 125000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3647+ | 0.12 EUR |
| PDTA143EQAZ |
|
Hersteller: NXP Semiconductors
Trans Digital BJT PNP 50V 100mA 440mW Automotive 3-Pin DFN-D EP
Trans Digital BJT PNP 50V 100mA 440mW Automotive 3-Pin DFN-D EP
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5495+ | 0.1 EUR |
| 10000+ | 0.088 EUR |