PDTA144EQAZ Nexperia
| Anzahl | Preis |
|---|---|
| 5495+ | 0.099 EUR |
| 10000+ | 0.085 EUR |
| 100000+ | 0.068 EUR |
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Technische Details PDTA144EQAZ Nexperia
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN, Qualification: AEC-Q101, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 47 kOhms, Frequency - Transition: 180 MHz, Power - Max: 280 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Grade: Automotive, Supplier Device Package: DFN1010D-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: 3-XDFN Exposed Pad, Packaging: Tape & Reel (TR), Resistors Included: R1 and R2.
Weitere Produktangebote PDTA144EQAZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PDTA144EQAZ | Hersteller : Nexperia USA Inc. |
 Description: TRANS PREBIAS PNP 50V 0.1A 3DFNQualification: AEC-Q101 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 180 MHz Power - Max: 280 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: DFN1010D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
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PDTA144EQAZ | Hersteller : Nexperia |
Digital Transistors SOT1215 50V .1A PNP RET |
Produkt ist nicht verfügbar |