PDTB113ET,215 Nexperia
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 15152+ | 0.035 EUR |
Produktrezensionen
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Technische Details PDTB113ET,215 Nexperia
Description: TRANS PREBIAS PNP 50V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V, Supplier Device Package: TO-236AB, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote PDTB113ET,215 nach Preis ab 0.041 EUR bis 0.4 EUR
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PDTB113ET,215 | Hersteller : NEXPERIA |
 Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ Power dissipation: 0.25W Current gain: 33 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1597 Stücke: Lieferzeit 7-14 Tag (e) |
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PDTB113ET,215 | Hersteller : NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ Power dissipation: 0.25W Current gain: 33 |
auf Bestellung 1597 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTB113ET,215 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V Supplier Device Package: TO-236AB Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms Resistors Included: R1 and R2 |
auf Bestellung 1956 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTB113ET,215 | Hersteller : Nexperia |
Digital Transistors PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 1 kOhm |
auf Bestellung 742 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTB113ET,215 | Hersteller : Nexperia |
Trans Digital BJT PNP 50V 500mA 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTB113ET,215 | Hersteller : NEXPERIA |
Trans Digital BJT PNP 50V 500mA 250mW Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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PDTB113ET,215 | Hersteller : Nexperia |
Trans Digital BJT PNP 50V 500mA 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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PDTB113ET,215 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V Supplier Device Package: TO-236AB Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |