Technische Details PDTB113ET,215 Nexperia
Description: TRANS PREBIAS PNP 50V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V, Supplier Device Package: TO-236AB, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote PDTB113ET,215 nach Preis ab 0.052 EUR bis 0.52 EUR
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PDTB113ET,215 | NEXPERIA |
 Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB Mounting: SMD Case: SOT23; TO236AB Collector-emitter voltage: 50V Base resistor: 1kΩ Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Current gain: 33 Kind of package: 7 inch reel; tape Base-emitter resistor: 1kΩ Collector current: 0.5A |
auf Bestellung 4431 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTB113ET,215 | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V Supplier Device Package: TO-236AB Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms Resistors Included: R1 and R2 |
auf Bestellung 1956 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTB113ET,215 | Nexperia |
Digital Transistors PDTB113ET/SOT23/TO-236AB |
auf Bestellung 707 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTB113ET,215 | Nexperia |
Trans Digital BJT PNP 50V 500mA 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PDTB113ET,215 |
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Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Current gain: 33
Kind of package: 7 inch reel; tape
Base-emitter resistor: 1kΩ
Collector current: 0.5A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Current gain: 33
Kind of package: 7 inch reel; tape
Base-emitter resistor: 1kΩ
Collector current: 0.5A
auf Bestellung 4431 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 334+ | 0.25 EUR |
| 532+ | 0.15 EUR |
| 812+ | 0.1 EUR |
| 1185+ | 0.071 EUR |
| 1323+ | 0.064 EUR |
| 1421+ | 0.06 EUR |
| 1498+ | 0.057 EUR |
| 3000+ | 0.052 EUR |
| PDTB113ET,215 |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Resistors Included: R1 and R2
auf Bestellung 1956 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 0.46 EUR |
| 74+ | 0.29 EUR |
| 119+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| PDTB113ET,215 |
|
Hersteller: Nexperia
Digital Transistors PDTB113ET/SOT23/TO-236AB
Digital Transistors PDTB113ET/SOT23/TO-236AB
auf Bestellung 707 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.52 EUR |
| 11+ | 0.32 EUR |
| 50+ | 0.23 EUR |
| 1000+ | 0.13 EUR |
| 3000+ | 0.096 EUR |
| 6000+ | 0.086 EUR |
| PDTB113ET,215 |
|
Hersteller: Nexperia
Trans Digital BJT PNP 50V 500mA 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R
Trans Digital BJT PNP 50V 500mA 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)