Produkte > NEXPERIA USA INC. > PDTC123JQB-QZ
PDTC123JQB-QZ

PDTC123JQB-QZ Nexperia USA Inc.


PDTC143X_TO_124XQB-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.064 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PDTC123JQB-QZ Nexperia USA Inc.

Description: TRANS PREBIAS NPN 50V 0.1A 3DFN, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 230 MHz, Power - Max: 340 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: DFN1110D-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Wettable Flank, Package / Case: 3-XDFN Exposed Pad, Packaging: Tape & Reel (TR), Resistors Included: R1 and R2, Qualification: AEC-Q101, Grade: Automotive.

Weitere Produktangebote PDTC123JQB-QZ nach Preis ab 0.08 EUR bis 0.37 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PDTC123JQB-QZ PDTC123JQB-QZ Hersteller : Nexperia USA Inc. PDTC143X_TO_124XQB-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
79+0.22 EUR
127+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
2000+0.08 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
PDTC123JQB-QZ PDTC123JQB-QZ Hersteller : Nexperia PDTC143X_TO_124XQB-Q_SER.pdf Digital Transistors SOT8015 50V .1A NPN RET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH