Technische Details PDTC123YT-QVL Nexperia
Description: PDTC123YT-Q/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V, Supplier Device Package: TO-236AB, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Qualification: AEC-Q101, Resistors Included: R1 and R2.
Weitere Produktangebote PDTC123YT-QVL
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PDTC123YT-QVL | Hersteller : NEXPERIA |
 Trans Digital BJT NPN 50V 100mA 250mW Automotive |
Produkt ist nicht verfügbar |
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PDTC123YT-QVL | Hersteller : Nexperia |
Trans Digital BJT NPN 50V 0.1A 250mW 3-Pin SOT-23 Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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PDTC123YT-QVL | Hersteller : Nexperia USA Inc. |
Description: PDTC123YT-Q/SOT23/TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V Supplier Device Package: TO-236AB Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
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PDTC123YT-QVL | Hersteller : Nexperia |
Digital Transistors NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ |
Produkt ist nicht verfügbar |