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PDTC124TMB,315 NXP Semiconductors

PDTC124TMB.pdf
Hersteller: NXP Semiconductors
Trans Digital BJT NPN 50V 100mA 250mW Automotive 3-Pin DFN-B T/R
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Lieferzeit 14-21 Tag (e)
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5301+0.12 EUR
10000+0.11 EUR
100000+0.089 EUR
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Technische Details PDTC124TMB,315 NXP Semiconductors

Description: TRANS PREBIAS NPN 50V 0.1A 3DFN, Qualification: AEC-Q100, Resistor - Base (R1): 22 kOhms, Frequency - Transition: 230 MHz, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Grade: Automotive, Supplier Device Package: DFN1006B-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR), Resistors Included: R1 Only.

Weitere Produktangebote PDTC124TMB,315

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PDTC124TMB,315 PDTC124TMB,315 Nexperia USA Inc. PDTC124TMB.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Qualification: AEC-Q100
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 230 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: DFN1006B-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Resistors Included: R1 Only
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTC124TMB,315 PDTC124TMB,315 Nexperia PDTC124TMB.pdf Digital Transistors SOT883B 50V .1A NPN RET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTC124TMB,315 PDTC124TMB.pdf
PDTC124TMB,315
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Qualification: AEC-Q100
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 230 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: DFN1006B-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Resistors Included: R1 Only
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTC124TMB,315 PDTC124TMB.pdf
PDTC124TMB,315
Hersteller: Nexperia
Digital Transistors SOT883B 50V .1A NPN RET
Produkt ist nicht verfügbar
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH