auf Bestellung 2016000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 15152+ | 0.036 EUR |
| 100000+ | 0.029 EUR |
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Technische Details PDTC143ET,215 Nexperia
Description: TRANS PREBIAS NPN 50V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote PDTC143ET,215 nach Preis ab 0.046 EUR bis 0.26 EUR
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PDTC143ET,215 | Hersteller : Nexperia |
 Digital Transistors PDTC143ET/SOT23/TO-236AB |
auf Bestellung 3000 Stücke: Lieferzeit 141-145 Tag (e) |
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PDTC143ET,215 | Hersteller : NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 230MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 31602 Stücke: Lieferzeit 7-14 Tag (e) |
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PDTC143ET,215 | Hersteller : NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 230MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
auf Bestellung 31602 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTC143ET,215 | Hersteller : NEXPERIA |
Trans Digital BJT NPN 50V 100mA 250mW Automotive 3-Pin SOT-23 T/R |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTC143ET,215 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTC143ET,215 | Hersteller : NEXPERIA |
Trans Digital BJT NPN 50V 100mA 250mW Automotive 3-Pin SOT-23 T/R |
auf Bestellung 273000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTC143ET,215 | Hersteller : NXP/Nexperia/We-En |
Транзистор цифровий smd; Структура = NPN; Uceo, В = 50; Ic, А = 0,1; hFE = 30 @ 10 мА, 5 В; Icutoff-max = 1 мкА; Ptot, Вт = 0,25; R1, кОм = 4,7; R2, кОм = 4,7; Uceo(sat), В @ Ic, Ib = 0,15 @ 500 мкA, 10 мA; Тексп, °С = -65...+150; SOT-23-3 |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTC143ET,215 | Hersteller : NXP Semiconductors |
SOT-23 |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTC143ET,215 | Hersteller : NEXPERIA |
Description: NEXPERIA - PDTC143ET,215 - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTC143ET,215 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
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