PDTC144EMB,315 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Qualification: AEC-Q100
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 230 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1006B-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 46+ | 0.39 EUR |
| 75+ | 0.24 EUR |
| 119+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.096 EUR |
| 2000+ | 0.085 EUR |
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Technische Details PDTC144EMB,315 Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN, Qualification: AEC-Q100, Grade: Automotive, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 47 kOhms, Frequency - Transition: 230 MHz, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: DFN1006B-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote PDTC144EMB,315 nach Preis ab 0.17 EUR bis 0.45 EUR
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PDTC144EMB,315 | Hersteller : Nexperia |
Digital Transistors PDTC144EMB/SOT883B/XQFN3 |
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PDTC144EMB,315 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN Qualification: AEC-Q100 Grade: Automotive Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 230 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1006B-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) |
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