PDTC144VMB,315 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Qualification: AEC-Q100
Grade: Automotive
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 230 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1006B-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.053 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PDTC144VMB,315 Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN, Qualification: AEC-Q100, Grade: Automotive, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 47 kOhms, Frequency - Transition: 230 MHz, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: DFN1006B-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote PDTC144VMB,315 nach Preis ab 0.067 EUR bis 0.39 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PDTC144VMB,315 | Hersteller : Nexperia |
Digital Transistors The factory is currently not accepting orders for this product. |
auf Bestellung 7444 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
PDTC144VMB,315 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN Qualification: AEC-Q100 Grade: Automotive Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 230 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1006B-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
|