PDTD113ZQAZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 500MA
Packaging: Bulk
Part Status: Active
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Technische Details PDTD113ZQAZ Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.5A 3DFN, Current - Collector (Ic) (Max): 500 mA, Grade: Automotive, Supplier Device Package: DFN1010D-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: 3-XDFN Exposed Pad, Packaging: Tape & Reel (TR), Resistors Included: R1 and R2, Qualification: AEC-Q101, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 1 kOhms, Frequency - Transition: 210 MHz, Power - Max: 325 mW, Voltage - Collector Emitter Breakdown (Max): 50 V.
Weitere Produktangebote PDTD113ZQAZ
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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PDTD113ZQAZ | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.5A 3DFNCurrent - Collector (Ic) (Max): 500 mA Grade: Automotive Supplier Device Package: DFN1010D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) Resistors Included: R1 and R2 Qualification: AEC-Q101 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 1 kOhms Frequency - Transition: 210 MHz Power - Max: 325 mW Voltage - Collector Emitter Breakdown (Max): 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
PDTD113ZQAZ | Nexperia |
Digital Transistors SOT1215 50V .5A PNP RET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PDTD113ZQAZ |
![]() |
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.5A 3DFN
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 210 MHz
Power - Max: 325 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Description: TRANS PREBIAS NPN 50V 0.5A 3DFN
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 210 MHz
Power - Max: 325 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PDTD113ZQAZ |
![]() |
Hersteller: Nexperia
Digital Transistors SOT1215 50V .5A PNP RET
Digital Transistors SOT1215 50V .5A PNP RET
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen
Stück im Wert von UAH



