Technische Details PDTD123EQAZ Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.5A 3DFN, Resistors Included: R1 and R2, Qualification: AEC-Q101, Resistor - Emitter Base (R2): 2.2 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 210 MHz, Power - Max: 325 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Grade: Automotive, Supplier Device Package: DFN1010D-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: 3-XDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote PDTD123EQAZ nach Preis ab 0.077 EUR bis 0.64 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PDTD123EQAZ | Nexperia |
Digital Transistors PDTD123EQA/SOT1215/DFN1010D-3 |
auf Bestellung 4901 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PDTD123EQAZ |
![]() |
Hersteller: Nexperia
Digital Transistors PDTD123EQA/SOT1215/DFN1010D-3
Digital Transistors PDTD123EQA/SOT1215/DFN1010D-3
auf Bestellung 4901 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.64 EUR |
| 10+ | 0.45 EUR |
| 100+ | 0.21 EUR |
| 1000+ | 0.13 EUR |
| 5000+ | 0.1 EUR |
| 10000+ | 0.083 EUR |
| 25000+ | 0.077 EUR |



