PDTD123EQAZ Nexperia USA Inc.
| Anzahl | Preis |
|---|---|
| 2814+ | 0.17 EUR |
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Technische Details PDTD123EQAZ Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.5A 3DFN, Resistors Included: R1 and R2, Qualification: AEC-Q101, Resistor - Emitter Base (R2): 2.2 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 210 MHz, Power - Max: 325 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Grade: Automotive, Supplier Device Package: DFN1010D-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: 3-XDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote PDTD123EQAZ nach Preis ab 0.065 EUR bis 0.54 EUR
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PDTD123EQAZ | Hersteller : Nexperia |
 Digital Transistors PDTD123EQA/SOT1215/DFN1010D-3 |
auf Bestellung 4901 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTD123EQAZ | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.5A 3DFN Resistors Included: R1 and R2 Qualification: AEC-Q101 Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 210 MHz Power - Max: 325 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Grade: Automotive Supplier Device Package: DFN1010D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) |
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