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PDTD123ET,215

PDTD123ET,215 NEXPERIA

PDTD123E_SER.pdf
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB
Collector current: 0.5A
Power dissipation: 0.25W
Current gain: 40
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Kind of package: 7 inch reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23; TO236AB
Type of transistor: NPN
Mounting: SMD
auf Bestellung 2574 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
278+0.26 EUR
414+0.17 EUR
524+0.14 EUR
627+0.11 EUR
763+0.094 EUR
1183+0.06 EUR
1289+0.055 EUR
1345+0.053 EUR
Mindestbestellmenge: 278 Stücke
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Technische Details PDTD123ET,215 NEXPERIA

Description: TRANS PREBIAS NPN 50V TO236AB, Resistors Included: R1 and R2, Part Status: Active, Supplier Device Package: TO-236AB, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Qualification: AEC-Q100, Grade: Automotive, Resistor - Emitter Base (R2): 2.2 kOhms, Resistor - Base (R1): 2.2 kOhms, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA.

Weitere Produktangebote PDTD123ET,215 nach Preis ab 0.079 EUR bis 0.45 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
PDTD123ET,215 PDTD123ET,215 Nexperia PDTD123E_SER.pdf Digital Transistors PDTD123ET/SOT23/TO-236AB
auf Bestellung 434 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.45 EUR
11+0.27 EUR
50+0.19 EUR
100+0.17 EUR
1000+0.11 EUR
3000+0.088 EUR
6000+0.079 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTD123ET,215 PDTD123ET,215 Nexperia USA Inc. PDTD123E_SER.pdf Description: TRANS PREBIAS NPN 50V TO236AB
Resistors Included: R1 and R2
Qualification: AEC-Q100
Grade: Automotive
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: TO-236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PDTD123ET,215 PDTD123E_SER.pdf
PDTD123ET,215
Hersteller: Nexperia
Digital Transistors PDTD123ET/SOT23/TO-236AB
auf Bestellung 434 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+0.45 EUR
11+0.27 EUR
50+0.19 EUR
100+0.17 EUR
1000+0.11 EUR
3000+0.088 EUR
6000+0.079 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTD123ET,215 PDTD123E_SER.pdf
PDTD123ET,215
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V TO236AB
Resistors Included: R1 and R2
Qualification: AEC-Q100
Grade: Automotive
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: TO-236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH