PDTD123EU135 NXP
Hersteller: NXPDescription: NXP - PDTD123EU135 - SCHOTTKY RECTIFIER DIODES
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details PDTD123EU135 NXP
Description: TRANS PREBIAS, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V, Supplier Device Package: SOT-323, Grade: Automotive, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 300 mW, Frequency - Transition: 225 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, Qualification: AEC-Q101.
Weitere Produktangebote PDTD123EU135
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PDTD123EU135 | Hersteller : NXP USA Inc. |
Description: TRANS PREBIAS Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 225 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Qualification: AEC-Q101 |
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