PDTD123YQAZ NXP Semiconductors
| Anzahl | Preis |
|---|---|
| 2814+ | 0.17 EUR |
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Technische Details PDTD123YQAZ NXP Semiconductors
Description: TRANS PREBIAS NPN 50V 0.5A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V, Supplier Device Package: DFN1010D-3, Grade: Automotive, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 325 mW, Frequency - Transition: 210 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Qualification: AEC-Q101, Resistors Included: R1 and R2.
Weitere Produktangebote PDTD123YQAZ nach Preis ab 0.11 EUR bis 0.53 EUR
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PDTD123YQAZ | Hersteller : Nexperia USA Inc. |
 Description: TRANS PREBIAS NPN 50V 0.5A 3DFNPackaging: Bulk Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: DFN1010D-3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 325 mW Frequency - Transition: 210 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 29800 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTD123YQAZ | Hersteller : Nexperia |
Digital Transistors SOT1215 50V .5A NPN RET |
auf Bestellung 4881 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTD123YQAZ | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.5A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: DFN1010D-3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 325 mW Frequency - Transition: 210 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
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