auf Bestellung 6290 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.68 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.19 EUR |
| 2000+ | 0.17 EUR |
| 4000+ | 0.13 EUR |
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Technische Details PEMD13,115 Nexperia
Description: TRANS PREBIAS 1NPN 1PNP SOT666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SOT-666, Part Status: Not For New Designs.
Weitere Produktangebote PEMD13,115 nach Preis ab 0.17 EUR bis 0.76 EUR
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PEMD13,115 | Hersteller : Nexperia USA Inc. |
 Description: TRANS PREBIAS 1NPN 1PNP SOT666Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-666 Part Status: Not For New Designs |
auf Bestellung 3737 Stücke: Lieferzeit 10-14 Tag (e) |
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PEMD13,115 | Hersteller : NEXPERIA |
Trans Digital BJT NPN/PNP 50V 100mA 300mW Automotive 6-Pin SOT-666 T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PEMD13,115 | Hersteller : NXP Semiconductors |
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auf Bestellung 14610 Stücke: Lieferzeit 21-28 Tag (e) |
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PEMD13,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP SOT666 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-666 Part Status: Not For New Designs |
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