PEMD16,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: TRANS PREBIAS 1NPN 1PNP SOT-666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-666
Part Status: Not For New Designs
auf Bestellung 3050 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 0.72 EUR |
| 40+ | 0.45 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
| 2000+ | 0.17 EUR |
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Technische Details PEMD16,115 Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP SOT-666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SOT-666, Part Status: Not For New Designs.
Weitere Produktangebote PEMD16,115 nach Preis ab 0.14 EUR bis 0.77 EUR
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PEMD16,115 | Hersteller : Nexperia |
Digital Transistors 50 V, 100 mA NPN/PNP resistor-equipped double transistor;R1 = 22 kohm, R2 = 22 kohm |
auf Bestellung 3600 Stücke: Lieferzeit 10-14 Tag (e) |
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| PEMD16,115 | Hersteller : NEXPERIA |
PEMD16.115 Complementary transistors |
Produkt ist nicht verfügbar |
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PEMD16,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP SOT-666 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-666 Part Status: Not For New Designs |
Produkt ist nicht verfügbar |