PEMD6,115 Nexperia
Hersteller: NexperiaDigital Transistors 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kohm, R2 = 47 kohm
auf Bestellung 3197 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.68 EUR |
| 10+ | 0.42 EUR |
| 100+ | 0.2 EUR |
| 1000+ | 0.14 EUR |
| 8000+ | 0.11 EUR |
| 24000+ | 0.1 EUR |
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Technische Details PEMD6,115 Nexperia
Description: TRANS PREBIAS 1NPN 1PNP SOT666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: SOT-666, Part Status: Not For New Designs.
Weitere Produktangebote PEMD6,115
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| PEMD6,115 | Hersteller : NEXPERIA |
PEMD6.115 Complementary transistors |
Produkt ist nicht verfügbar |
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PEMD6,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP SOT666 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-666 Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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PEMD6,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP SOT666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-666 Part Status: Not For New Designs |
Produkt ist nicht verfügbar |