PEMH13,315 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN 50V SOT-666
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-666
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
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Technische Details PEMH13,315 Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN 50V SOT-666, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 300mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Supplier Device Package: SOT-666, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 4.7kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Current - Collector Cutoff (Max): 1µA.
Weitere Produktangebote PEMH13,315
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PEMH13,315 | Hersteller : Nexperia |
Digital Transistors SOT666 50V .1A NPN/NPN RET |
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