
PH1875L,115 NXP Semiconductors
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Technische Details PH1875L,115 NXP Semiconductors
Description: MOSFET N-CH 75V 45.8A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45.8A (Tc), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 20A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V.
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PH1875L,115 | Hersteller : NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45.8A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 20A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
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