PH20100S.115
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Lieferzeit 21-28 Tag (e)
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Technische Details PH20100S.115
Description: MOSFET N-CH 100V 34.3A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34.3A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2264 pF @ 25 V.
Weitere Produktangebote PH20100S.115
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PH20100S,115 | Hersteller : NEXPERIA |
 Trans MOSFET N-CH 100V 34.3A 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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PH20100S,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 34.3A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34.3A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2264 pF @ 25 V |
Produkt ist nicht verfügbar |