PH2525L,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: NEXPERIA PH2525L - 100A, 25V, 0.
Packaging: Bulk
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 34.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 12 V
auf Bestellung 4100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1040+ | 0.45 EUR |
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Technische Details PH2525L,115 Nexperia USA Inc.
Description: NEXPERIA PH2525L - 100A, 25V, 0., Packaging: Bulk, Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 34.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 12 V.
Weitere Produktangebote PH2525L,115 nach Preis ab 0.7 EUR bis 0.79 EUR
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PH2525L,115 | Hersteller : Nexperia |
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PH2525L,115 | Hersteller : NXP Semiconductors |
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| PH2525L,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - PH2525L,115 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: Lead (27-Jun-2024) |
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