PH5030AL115
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Technische Details PH5030AL115
Description: SMALL SIGNAL N-CHANNEL MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.15V @ 1mA, Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 91A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Bulk.
Weitere Produktangebote PH5030AL115
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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PH5030AL115 | Nexperia USA Inc. |
Description: SMALL SIGNAL N-CHANNEL MOSFET Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.15V @ 1mA Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 91A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PH5030AL115 |
Hersteller: Nexperia USA Inc.
Description: SMALL SIGNAL N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Bulk
Description: SMALL SIGNAL N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH