PH5525L,115 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 81.7A LFPAK56
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 12
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 4.5 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 81.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 25 V
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Technische Details PH5525L,115 NXP USA Inc.
Description: MOSFET N-CH 25V 81.7A LFPAK56, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 12, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5, Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 4.5 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.15V @ 1mA, Power Dissipation (Max): 62.5W (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 81.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 25 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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PH5525L,115 | Hersteller : NXP Semiconductors |
MOSFET PH5525L/LFPAK/REEL7// |
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