| Anzahl | Privatkunde |
|---|---|
| 398+ | 1.64 EUR |
| 500+ | 1.45 EUR |
| 1000+ | 1.31 EUR |
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Technische Details PH6325L,115 Nexperia
Description: MOSFET N-CH 25V 78.7A LFPAK56, Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 62.5W (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 78.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote PH6325L,115
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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PH6325L,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 25V 78.7A LFPAK56Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 78.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PH6325L,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 78.7A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 78.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 25V 78.7A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 78.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



