PHB33NQ20T,118
Produktcode: 183809
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Lieblingsprodukt
Hersteller:
Gehäuse: TO-263-3
Uds,V: 200 V
Idd,A: 32 A
Rds(on), Ohm: 65 mOhm
JHGF: SMD
Produktrezensionen
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Weitere Produktangebote PHB33NQ20T,118 nach Preis ab 1.27 EUR bis 3.04 EUR
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PHB33NQ20T,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 200V 32.7A D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 32.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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PHB33NQ20T,118 | Nexperia |
MOSFETs PHB33NQ20T/SOT404/D2PAK |
auf Bestellung 1941 Stücke: Lieferzeit 10-14 Tag (e) |
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PHB33NQ20T,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 200V 32.7A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 32.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PHB33NQ20T,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 200V 32.7A D2PAK
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 200V 32.7A D2PAK
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 1.37 EUR |
| 1600+ | 1.27 EUR |
| PHB33NQ20T,118 |
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Hersteller: Nexperia
MOSFETs PHB33NQ20T/SOT404/D2PAK
MOSFETs PHB33NQ20T/SOT404/D2PAK
auf Bestellung 1941 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.04 EUR |
| 10+ | 2.53 EUR |
| 100+ | 2.01 EUR |
| 800+ | 1.44 EUR |
| 2400+ | 1.37 EUR |
| 4800+ | 1.35 EUR |
| PHB33NQ20T,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 200V 32.7A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 200V 32.7A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)