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PHB45NQ10T,118

PHB45NQ10T,118 Nexperia USA Inc.


PHB45NQ10T.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 47A D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.22 EUR
10+2.72 EUR
100+1.87 EUR
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Technische Details PHB45NQ10T,118 Nexperia USA Inc.

Description: MOSFET N-CH 100V 47A D2PAK, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V.

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PHB45NQ10T,118 PHB45NQ10T,118 Hersteller : Nexperia USA Inc. PHB45NQ10T.pdf Description: MOSFET N-CH 100V 47A D2PAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
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PHB45NQ10T,118 PHB45NQ10T,118 Hersteller : Nexperia PHB45NQ10T.pdf MOSFETs N-channel TrenchMOS standard level FET
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