PHD108NQ03LT,118 NXP Semiconductors
auf Bestellung 1190 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 758+ | 0.73 EUR |
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Technische Details PHD108NQ03LT,118 NXP Semiconductors
Description: MOSFET N-CH 25V 75A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V.
Weitere Produktangebote PHD108NQ03LT,118
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PHD108NQ03LT,118 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 25V 75A DPAKPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1.375 pF @ 12 V |
auf Bestellung 1190 Stücke: Lieferzeit 10-14 Tag (e) |
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| PHD108NQ03LT,118 | Hersteller : NXP |
Description: NXP - PHD108NQ03LT,118 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1190 Stücke: Lieferzeit 14-21 Tag (e) |
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PHD108NQ03LT,118 | Hersteller : NXP Semiconductors |
Trans MOSFET N-CH 25V 75A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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PHD108NQ03LT,118 | Hersteller : NXP USA Inc. |
Description: MOSFET N-CH 25V 75A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V |
Produkt ist nicht verfügbar |
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PHD108NQ03LT,118 | Hersteller : Nexperia |
MOSFET TAPE13 PWR-MOS |
Produkt ist nicht verfügbar |