PHD22NQ20T,118 NXP USA Inc.

Description: MOSFET N-CH 200V 21.1A DPAK, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 30.8 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 21.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ).