PHE13003C,126 NXP USA Inc.
Hersteller: NXP USA Inc.Description: NOW WEEN - PHE13003C - POWER BIP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2.1 W
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3963+ | 0.19 EUR |
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Technische Details PHE13003C,126 NXP USA Inc.
Description: TRANS NPN 400V 1.5A TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 2.1 W.
Weitere Produktangebote PHE13003C,126 nach Preis ab 0.18 EUR bis 1.04 EUR
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PHE13003C,126 | Hersteller : WeEn Semiconductors |
Description: TRANS NPN 400V 1.5A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 2.1 W |
auf Bestellung 370 Stücke: Lieferzeit 21-28 Tag (e) |
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PHE13003C,126 | Hersteller : WeEn Semiconductors |
Bipolar Transistors - BJT Single NPN 1.5A 2.1W |
auf Bestellung 242 Stücke: Lieferzeit 14-28 Tag (e) |
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PHE13003C,126 | Hersteller : Ween |
Trans GP BJT NPN 400V 1.5A 2100mW 3-Pin SPT Ammo |
Produkt ist nicht verfügbar |
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PHE13003C,126 | Hersteller : WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92 Kind of package: Ammo Pack Type of transistor: NPN Power dissipation: 2.1W Polarisation: bipolar Mounting: THT Case: TO92 Collector-emitter voltage: 400V Current gain: 5...25 Collector current: 1.5A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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PHE13003C,126 | Hersteller : WeEn Semiconductors |
Description: TRANS NPN 400V 1.5A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 2.1 W |
Produkt ist nicht verfügbar |
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PHE13003C,126 | Hersteller : WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92 Kind of package: Ammo Pack Type of transistor: NPN Power dissipation: 2.1W Polarisation: bipolar Mounting: THT Case: TO92 Collector-emitter voltage: 400V Current gain: 5...25 Collector current: 1.5A |
Produkt ist nicht verfügbar |