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PHK04P02T,518

PHK04P02T,518 Nexperia USA Inc.

PHGLS21829-1.pdf?t.download=true&u=5oefqw
Hersteller: Nexperia USA Inc.
Description: TRANSISTORS>100MHZ
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 12.8 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 16 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 600mV @ 1mA (Typ)
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.66A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 574713 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1244+0.4 EUR
Mindestbestellmenge: 1244
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Technische Details PHK04P02T,518 Nexperia USA Inc.

Description: TRANSISTORS>100MHZ, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 12.8 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 16 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 600mV @ 1mA (Typ), Power Dissipation (Max): 5W (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.66A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.

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PHK04P02T,518 PHK04P02T,518 Hersteller : Nexperia PHK04P02T-1599785.pdf MOSFET TAPE13 PWR-MOS
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