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PHK31NQ03LT,518

PHK31NQ03LT,518 Nexperia USA Inc.

PHGLS22917-1.pdf?t.download=true&u=5oefqw
Hersteller: Nexperia USA Inc.
Description: NEXPERIA PHK31NQ03LT - 30.4A, 30
Input Capacitance (Ciss) (Max) @ Vds: 4235 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 6.9W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 88953 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
555+0.91 EUR
Mindestbestellmenge: 555
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Technische Details PHK31NQ03LT,518 Nexperia USA Inc.

Description: NEXPERIA PHK31NQ03LT - 30.4A, 30, Input Capacitance (Ciss) (Max) @ Vds: 4235 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.15V @ 1mA, Power Dissipation (Max): 6.9W (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 30.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk.

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PHK31NQ03LT,518 PHK31NQ03LT,518 Hersteller : Nexperia PHK31NQ03LT-1320242.pdf MOSFET MOSFET N-CH 30V 30.4A
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