PHKD6N02LT,518 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 10.9A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A
Drain to Source Voltage (Vdss): 20V
Power - Max: 4.17W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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Technische Details PHKD6N02LT,518 Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 10.9A 8SO, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 5V, Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 5V, Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 10.9A, Drain to Source Voltage (Vdss): 20V, Power - Max: 4.17W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote PHKD6N02LT,518
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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PHKD6N02LT,518 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 10.9A 8SO Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 5V Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Current - Continuous Drain (Id) @ 25°C: 10.9A Drain to Source Voltage (Vdss): 20V Power - Max: 4.17W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
PHKD6N02LT,518 | Nexperia |
MOSFET TAPE13 MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PHKD6N02LT,518 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 10.9A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A
Drain to Source Voltage (Vdss): 20V
Power - Max: 4.17W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 10.9A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A
Drain to Source Voltage (Vdss): 20V
Power - Max: 4.17W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PHKD6N02LT,518 |
|
Hersteller: Nexperia
MOSFET TAPE13 MOSFET
MOSFET TAPE13 MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH