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PHP222NQ04LT,127 NXP USA Inc.


PHP,PHB222NQ04LT.pdf
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 25 V
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Technische Details PHP222NQ04LT,127 NXP USA Inc.

Description: MOSFET N-CH 40V 75A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 93.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 25 V.

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PHP222NQ04LT,127 PHP222NQ04LT,127 NXP Semiconductors PHP,PHB222NQ04LT.pdf MOSFET TRENCHMOS (TM) FET
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PHP222NQ04LT,127 PHP,PHB222NQ04LT.pdf
Hersteller: NXP Semiconductors
MOSFET TRENCHMOS (TM) FET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH