PHP225,118 NXP Semiconductors

Description: MOSFET 2P-CH 30V 2.3A 8SO, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.8V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 2.3A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).