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PHP27NQ11T,127

PHP27NQ11T,127 NXP Semiconductors

PHP27NQ11T.pdf Hersteller: NXP Semiconductors
Description: NEXPERIA PHP27NQ11T - 27.6A, 110
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 14A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 110 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 25 V
auf Bestellung 4711 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
536+0.99 EUR
Mindestbestellmenge: 536
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Technische Details PHP27NQ11T,127 NXP Semiconductors

Description: NEXPERIA PHP27NQ11T - 27.6A, 110, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27.6A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 14A, 10V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 110 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 25 V.

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PHP27NQ11T,127 PHP27NQ11T,127 Hersteller : Nexperia PHP27NQ11T.pdf MOSFET TRENCHMOS (TM) FET
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