PHT11N06LT,135 NXP Semiconductors

Description: MOSFET N-CH 55V 4.9A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 5V, Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SC-73, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±13V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V.