PHT4NQ10T,135 Nexperia

Description: MOSFET N-CH 100V 3.5A SOT223, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: SOT-223, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 6.9W (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 1.75A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).