Technische Details PHT6N06LT,135 NXP Semiconductors
Description: MOSFET N-CH 55V 2.5A SOT223, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±13V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Obsolete, Supplier Device Package: SC-73, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote PHT6N06LT,135 nach Preis ab 0.35 EUR bis 1.39 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| PHT6N06LT,135 | NXP Semiconductors | Trans MOSFET N-CH 55V 2.5A 4-Pin(3+Tab) SC-73 T/R |
auf Bestellung 238440 Stücke: Lieferzeit 14-21 Tag (e) |
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| PHT6N06LT,135 | NXP |
 Description: NXP - PHT6N06LT,135 - MISCELLANEOUS MOSFETStariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 316136 Stücke: Lieferzeit 14-21 Tag (e) |
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| PHT6N06LT,135 | Nexperia USA Inc. |
Description: POWER FIELD-EFFECT TRANSISTOR, 2 Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±13V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Obsolete Supplier Device Package: SC-73 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Bulk |
auf Bestellung 290604 Stücke: Lieferzeit 10-14 Tag (e) |
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| PHT6N06LT,135 |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PHT6N06LT,135 |
Hersteller: NXP Semiconductors
Trans MOSFET N-CH 55V 2.5A 4-Pin(3+Tab) SC-73 T/R
Trans MOSFET N-CH 55V 2.5A 4-Pin(3+Tab) SC-73 T/R
auf Bestellung 238440 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1368+ | 0.48 EUR |
| 10000+ | 0.42 EUR |
| 100000+ | 0.35 EUR |
| PHT6N06LT,135 |
|
Hersteller: NXP
Description: NXP - PHT6N06LT,135 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: NXP - PHT6N06LT,135 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 316136 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1602+ | 0.75 EUR |
| PHT6N06LT,135 |
Hersteller: Nexperia USA Inc.
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±13V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SC-73
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±13V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SC-73
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
auf Bestellung 290604 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 396+ | 1.39 EUR |
| PHT6N06LT,135 |
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)