PHT6N06LT,135 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 2.5A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±13V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Description: MOSFET N-CH 55V 2.5A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±13V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
auf Bestellung 314004 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1332+ | 0.55 EUR |
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Technische Details PHT6N06LT,135 NXP USA Inc.
Description: MOSFET N-CH 55V 2.5A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V, Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SC-73, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±13V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V.
Weitere Produktangebote PHT6N06LT,135
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| PHT6N06LT,135 |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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| PHT6N06LT,135 | Hersteller : NXP |
 Description: NXP - PHT6N06LT,135 - MISCELLANEOUS MOSFETStariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 316136 Stücke: Lieferzeit 14-21 Tag (e) |
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PHT6N06LT,135 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 55V 2.5A 4-Pin(3+Tab) SC-73 T/R |
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PHT6N06LT,135 | Hersteller : NXP USA Inc. |
Description: MOSFET N-CH 55V 2.5A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SC-73 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±13V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
Produkt ist nicht verfügbar |
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PHT6N06LT,135 | Hersteller : Nexperia |
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