PHT6N06LT,135 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±13V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SC-73
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Produktrezensionen
Produktbewertung abgeben
Technische Details PHT6N06LT,135 Nexperia USA Inc.
Description: MOSFET N-CH 55V 2.5A SOT223, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±13V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Obsolete, Supplier Device Package: SC-73, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote PHT6N06LT,135
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| PHT6N06LT,135 |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PHT6N06LT,135 |
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)