auf Bestellung 3000 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 52+ | 1.02 EUR |
| 63+ | 0.83 EUR |
| 100+ | 0.57 EUR |
| 1000+ | 0.32 EUR |
| 3000+ | 0.29 EUR |
| 9000+ | 0.26 EUR |
| 24000+ | 0.24 EUR |
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Technische Details PIMC32PAS-QX Nexperia
Description: PIMC32PAS-Q/SOT1118/HUSON6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 1 NPN - Pre-Biased, 1 PNP, Power - Max: 360mW, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V, Frequency - Transition: 210MHz, 150MHz, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: DFN2020D-6, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PIMC32PAS-QX nach Preis ab 0.19 EUR bis 0.72 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| PIMC32PAS-QX | Hersteller : Nexperia USA Inc. |
Description: PIMC32PAS-Q/SOT1118/HUSON6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN - Pre-Biased, 1 PNP Power - Max: 360mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Frequency - Transition: 210MHz, 150MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: DFN2020D-6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PIMC32PAS-QX | Hersteller : Nexperia USA Inc. |
Description: PIMC32PAS-Q/SOT1118/HUSON6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN - Pre-Biased, 1 PNP Power - Max: 360mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Frequency - Transition: 210MHz, 150MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: DFN2020D-6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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