PJA3401A_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 994 pF @ 15 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.14 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
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Technische Details PJA3401A_R1_00001 Panjit International Inc.
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 54mOhm @ 3.6A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 994 pF @ 15 V.
Weitere Produktangebote PJA3401A_R1_00001 nach Preis ab 0.089 EUR bis 0.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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PJA3401A_R1_00001 | PanJit |
Trans MOSFET P-CH 30V 3.6A 3-Pin SOT-23 T/R |
auf Bestellung 1583 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3401A_R1_00001 | PanJit |
Trans MOSFET P-CH 30V 3.6A 3-Pin SOT-23 T/R |
auf Bestellung 2299 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3401A_R1_00001 | Panjit |
MOSFETs 30V P-Channel Enhancement Mode MOSFET |
auf Bestellung 19694 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3401A_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 3.6A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 994 pF @ 15 V |
auf Bestellung 6683 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3401A_R1_00001 | PanJit |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W On-state resistance: 86mΩ Mounting: SMD Pulsed drain current: -14.4A Power dissipation: 1.25W Gate charge: 19nC Polarisation: unipolar Drain current: -3.6A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: SOT23 |
auf Bestellung 1583 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PJA3401A_R1_00001 |
|
Hersteller: PanJit
Trans MOSFET P-CH 30V 3.6A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 30V 3.6A 3-Pin SOT-23 T/R
auf Bestellung 1583 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 709+ | 0.25 EUR |
| 997+ | 0.18 EUR |
| 1205+ | 0.14 EUR |
| PJA3401A_R1_00001 |
|
Hersteller: PanJit
Trans MOSFET P-CH 30V 3.6A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 30V 3.6A 3-Pin SOT-23 T/R
auf Bestellung 2299 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 344+ | 0.52 EUR |
| PJA3401A_R1_00001 |
|
Hersteller: Panjit
MOSFETs 30V P-Channel Enhancement Mode MOSFET
MOSFETs 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 19694 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.58 EUR |
| 12+ | 0.26 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.17 EUR |
| 3000+ | 0.11 EUR |
| 6000+ | 0.1 EUR |
| 9000+ | 0.089 EUR |
| PJA3401A_R1_00001 |
|
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 994 pF @ 15 V
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 994 pF @ 15 V
auf Bestellung 6683 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 0.67 EUR |
| 52+ | 0.4 EUR |
| 72+ | 0.3 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.19 EUR |
| PJA3401A_R1_00001 |
|
Hersteller: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
On-state resistance: 86mΩ
Mounting: SMD
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Gate charge: 19nC
Polarisation: unipolar
Drain current: -3.6A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
On-state resistance: 86mΩ
Mounting: SMD
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Gate charge: 19nC
Polarisation: unipolar
Drain current: -3.6A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
auf Bestellung 1583 Stücke:
Lieferzeit 14-21 Tag (e)